Published January 1, 2010 | Version v1
Journal article

Simple model for detection of spin accumulation in a ferromagnetic double tunnel junction

Creators

  • 1. National Institute for Materials Science, Tsukuba 305-0047 (Japan)

Description

We study the effect of spin accumulation in ferromagnetic double tunnel junctions based on a simple model. The analytical results for typical cases show that spin accumulation enhances the tunnel magnetoresistance (TMR) effect and furthermore affects electric potential of the center electrode. These effects are possibly used for the detection of spin accumulation in ferromagnetic double tunnel junctions.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/200/5/052015

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
200
Journal Issue
5
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
international conference on magnetism
Acronym
ICM 2009
Dates
26-31 Jul 2009
Place
Karlsruhe (Germany)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42041625
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BUILDUP; DETECTION; ELECTRIC POTENTIAL; ELECTRODES; FERROMAGNETIC MATERIALS; MAGNETORESISTANCE; SIMULATION; SPIN; SUPERCONDUCTING JUNCTIONS; TUNNEL EFFECT
Descriptors DEC
ANGULAR MOMENTUM; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; MAGNETIC MATERIALS; MATERIALS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES