Published February 8, 2012 | Version v1
Journal article

Ferromagnetic Heusler alloy Co2FeSi films on GaAs(1 1 0) grown by molecular beam epitaxy

  • 1. Paul-Drude-Institut fuer Festkoerperelektronik Berlin, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

Description

Epitaxial layers of the Heusler alloy Co2FeSi were grown by molecular beam epitaxy on GaAs(1 1 0) at different growth temperatures TG. Below a transition temperature Ttrans = 200 °C samples with high interfacial perfection and crystal quality were obtained, whereas above Ttrans a strong surface and interface roughening sets in. All samples are ferromagnetic and reveal a uniaxial magnetic anisotropy with the easy axis along the [ 1-bar 1 0] direction. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/45/5/055002

Additional details

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
45
Journal Issue
5
Journal Page Range
[7 p.]
ISSN
0022-3727
CODEN
JPAPBE