Published September 2002 | Version v1
Miscellaneous Open

Charge storage in Si-implanted SiO2 layers examined by scanning probe microscopy

  • 1. TU Dresden, Institut fuer Tieftemperaturphysik, D-01062 Dresden (Germany)
  • 2. Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, PF 510119, D-01314 Dresden (Germany)

Description

Silicon-dioxide layers on (100)Si with a thickness of 25 nm were silicon implanted with different doses and subsequently annealed at high temperatures (1050 grad C/1150 grad C). The formation of Si-rich regions as well as of Si-nano-clusters has been verified by Rutherford backscattering (RBS) and transmission electron microscopy (TEM). (Authors)

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Part of:
12. International conference on thin films (ICTF 12). Book of Abstract

Additional details

Identifiers

Publishing Information

Publisher
Institute of Physics, Slovak Academy of Sciences, VEDA
Imprint Place
Bratislava (Slovakia)
Imprint Title
12. International conference on thin films (ICTF 12). Book of Abstract
Imprint Pagination
182 p.
Journal Page Range
1 p.
Report number
INIS-SK--2007-001

Conference

Title
12. International conference on thin films
Dates
15-20 Sep 2002
Place
Bratislava (Slovakia)

Optional Information

Notes
p. TF6.6.O; E-mail: Reinhard.Beyer@physik.tu-dresden.de