Published September 2002
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Charge storage in Si-implanted SiO2 layers examined by scanning probe microscopy
- 1. TU Dresden, Institut fuer Tieftemperaturphysik, D-01062 Dresden (Germany)
- 2. Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, PF 510119, D-01314 Dresden (Germany)
Description
Silicon-dioxide layers on (100)Si with a thickness of 25 nm were silicon implanted with different doses and subsequently annealed at high temperatures (1050 grad C/1150 grad C). The formation of Si-rich regions as well as of Si-nano-clusters has been verified by Rutherford backscattering (RBS) and transmission electron microscopy (TEM). (Authors)
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Additional details
Identifiers
Publishing Information
- Publisher
- Institute of Physics, Slovak Academy of Sciences, VEDA
- Imprint Place
- Bratislava (Slovakia)
- Imprint Title
- 12. International conference on thin films (ICTF 12). Book of Abstract
- Imprint Pagination
- 182 p.
- Journal Page Range
- 1 p.
- Report number
- INIS-SK--2007-001
Conference
- Title
- 12. International conference on thin films
- Dates
- 15-20 Sep 2002
- Place
- Bratislava (Slovakia)
INIS
- Country of Publication
- Slovakia
- Country of Input or Organization
- Slovakia
- INIS RN
- 38059327
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- BACKSCATTERING; EXPERIMENTAL DATA; ION IMPLANTATION; MICROSTRUCTURE; MOLECULAR BEAMS; NANOSTRUCTURES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; RUTHERFORD SCATTERING; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SOLIDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- BEAMS; CHALCOGENIDES; DATA; ELASTIC SCATTERING; ELECTRON MICROSCOPY; ELEMENTS; FILMS; INFORMATION; MATERIALS; MICROSCOPY; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY
Optional Information
- Notes
- p. TF6.6.O; E-mail: Reinhard.Beyer@physik.tu-dresden.de