Determination of the acoustic phonon-hot carriers interaction in n- and p-type modulation-doped GaInNAs/GaAs quantum wells

Highlights: • Power dissipation mechanism determined around the critical temperature of the carriers. • Hot electron power dissipation mechanism switches from deformation potential to piezoelectric effect when N introduced to GaInAs. • The piezoelectric stress constant tends to decrease for n-type and increase p-type samples. • Hot electron energy relaxation time profoundly decreases the incorporation of N atom. • The thermal annealing slightly affects the hot-electron energy relaxation time for n-type samples. We report on the power loss mechanisms of hot carries in as-grown and annealed n- and p-type modulation-doped GaAs/Ga_0.68In_0.32N_yAs_1-y (y = 0.009, and 0.012) quantum well structures considering acoustic phonon interactions via the deformation potential (non-polar) and piezoelectric (polar) scatterings. By analysis of the applied electric field dependent amplitude of the Shubnikov de Haas oscillations, it has been revealed that incorporation of N atom into Ga_0.68In_0.32As switches the dominant power loss mechanism from non-polar to polar mechanism. The piezoelectricity of n- and p-type Ga_0.68In_0.32N_yAs_1-y alloys is at least three times higher than N-free samples. A comparison between as-grown n- and p-type samples depicts that the p-type sample's piezoelectricity is higher than that of n-type samples. After thermal annealing, there is a slight decrement and increment in piezoelectric stress constant for n-type the sample with 0.9% and 1.2% N, respectively.