Impurity electroluminescence of GaAs doped with V

Impurity electroluminescence (EL) of GaAs:V at E>7x103 V/cm and T=80-300 K is detected. Close correspondence of EL band shape and absorption spectra in the range of hν ∼ 1.1 eV and photoluminescence in the range of hν ∼ 0.7 eV is observed. EL in ∼ 0.7 eV range is defined by V0 atom intercenter transitions, and in ∼ 1.1 eV range - by V- atoms