Published December 17, 2018 | Version v1
Journal article

Simultaneous manipulation of O-doping and metal vacancy in atomically thin Zn10In16S34 nanosheet arrays toward improved photoelectrochemical performance

  • 1. School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials and Physics (CECMP), Soochow University, Suzhou (China)
  • 2. School of Materials Science and Engineering, Jiangsu University, Zhenjiang (China)

Description

The facile hydrothermal synthesis of Zn10In16S34 atomically thin nanosheet arrays on fluorine-doped tin oxide glass (FTO) substrates is presented. Through controlling heat treatment in air, O-doping and Zn, S vacancies were simultaneously introduced in Zn10In16S34 nanosheets with adjusted phase, morphology, chemical compositions, and energy level distribution. The surface defect states are passivated by depositing ultrathin Al2O3 film by atomic layer deposition technology. The performance of Zn10In16S34 photoanodes is largely improved, with 4.7 times higher current density and reduced onset potential. The experimental results and density functional theory calculations indicate that the enhancement is attributed to the fast photoexcited electron-hole pair separation, decreased surface transfer impedance, prolonged carrier lifetime, and reduced overpotential of oxygen evolution reaction. (copyright 2018 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Availability note (English)

Available from: http://dx.doi.org/10.1002/anie.201811632

Additional details

Identifiers

Publishing Information

Journal Title
Angewandte Chemie (International Edition)
Journal Volume
57
Journal Issue
51
Journal Page Range
p. 16882-16887
ISSN
1433-7851
CODEN
ACIEF5

Optional Information

Notes
With 6 figs., 40 refs.