Coexistence of piezoelectricity and electric conduction in oxygen-deficient NaNbO3−δ sub-micron cubes
- 1. Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of)
- 2. Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of)
- 3. Division of Nano Sciences and Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of)
Description
Highlights: • Introduction of oxygen vacancy in NaNbO3 sub-micron cube through the thermal annealing with Zr foil in vacuum. • Confirmation of the Pmc21symmetry for oxygen-deficient NaNbO3−δ. • Observation of coexistence of piezoelectricity and electric conduction in oxygen-deficient NaNbO3−δ sub-micron cubes. -- Abstract: We have investigated the effect of oxygen vacancy on the structural and electrical properties of NaNbO3 sub-micron cubes. Through the Rietveld analysis and Raman scattering, we have confirmed that both NaNbO3 and oxygen deficient NaNbO3−δ have Pmc21 symmetry, which has no space-inversion. The oxygen vacancy seems to induce the change from the ferroelectricity of NaNbO3 to the piezoelectricity of NaNbO3−δ and the increase of electric conduction. This work may provide the plausible way to realize sub-micron-size lead-free piezoelectric semiconductors with perovskite structure, which should be quite useful for piezoelectric energy harvesting, switchable diode, and photovoltaic applications
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2013.12.002Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2013.12.002;
- PII
- S0921-5107(13)00419-4;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 182
- Journal Page Range
- p. 81-85
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45056617
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ELECTRICAL PROPERTIES; FOILS; LEAD; OXYGEN; PEROVSKITE; PHOTOVOLTAIC EFFECT; PIEZOELECTRICITY; RAMAN EFFECT; SEMICONDUCTOR MATERIALS; SYMMETRY; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICITY; ELEMENTS; HEAT TREATMENTS; MATERIALS; METALS; MINERALS; NONMETALS; OXIDE MINERALS; PEROVSKITES; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; POINT DEFECTS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.