New techniques of implantation for near-term applications

We have studied new techniques associated with ion implantation. This includes recoil implantation and transient processes. The main results and some perspectives for industrial development of the RITA process (Recoil Implantation plus Transient Annealing) are presented. Theoretical and technical problems of flash-doping by ion implantation are discussed. The purpose of this process is to implant the total dose of required dopant in a time short enough to obtain a transient melting of the implanted layer. Our investigation shows that the present technology makes such studies possible. Emphasis is put on the know-how and equipment development by controlled thermonuclear fusion research which will give more suitable equipment in the near future. (orig.)