Published September 15, 2003 | Version v1
Journal article Metadata-only

Study in chemical bonding states of SiC films before and after hydrogen ion irradiation

Creators

Description

SiC films on stainless steel prepared by ion beam mixing were irradiated by hydrogen ion beam with an energy of 5 keV and a dose of 1 x 1022 ions/m2. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films before and after hydrogen ion irradiation in order to study the effect of hydrogen ion irradiation on SiC films and to understand how the chemical sputtering processes of carbon in SiC films takes place

Additional details

Identifiers

DOI
10.1016/S0022-3115(03)00238-1;
arXiv
arXiv:hep-ph/9712364v1;
PII
S0022311503002381;

Publishing Information

Journal Title
Journal of Nuclear Materials
Journal Volume
321
Journal Issue
2-3
Journal Page Range
p. 152-157
ISSN
0022-3115
CODEN
JNUMAM

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35021696
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHEMICAL BONDS; FILMS; HYDROGEN IONS; ION BEAMS; PHYSICAL RADIATION EFFECTS; SILICON CARBIDES; SPUTTERING; STAINLESS STEELS; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
ALLOYS; BEAMS; CARBIDES; CARBON ADDITIONS; CARBON COMPOUNDS; CHARGED PARTICLES; ELECTRON SPECTROSCOPY; HIGH ALLOY STEELS; IONS; IRON ALLOYS; IRON BASE ALLOYS; PHOTOELECTRON SPECTROSCOPY; RADIATION EFFECTS; SILICON COMPOUNDS; SPECTROSCOPY; STEELS; TRANSITION ELEMENT ALLOYS

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.