Published May 2006 | Version v1
Journal article

Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots

  • 1. Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)
  • 2. NL Nanosemiconductor GmbH, Konrad-Adenauer-Allee 11, 44263 Dortmund (Germany)

Description

Optical properties of self-organized QDs grown on thick metamorphic InGaAs layers with different In composition are studied. The dots are formed by an overgrowth of original InAs islands with thin InGaAs or InAlAs layers. Room temperature photoluminescence at 1.55 μm is demonstrated for the sample with 27% In composition in the matrix. The overgrowth with InAlAs layers permits to eliminate the wetting layer states and increase energy separation between QD ground and excited states. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.200566178

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. A, Applied Research
Journal Volume
203
Journal Issue
6
Journal Page Range
p. 1359-1364
ISSN
0031-8965
CODEN
PSSABA

Conference

Title
Trends in nanotechnology conference
Acronym
TNT 2005
Dates
29 Aug - 2 Sep 2005
Place
Oviedo (Spain)

Optional Information

Notes
With 6 figs., 1 tab., 11 refs.. SICI: 0031-8965(200605)203:6<1359::AID-PSSA200566178>3.0.TX;2-5