Published June 2004
| Version v1
Journal article
Photosensitivity of APV-films in CdTe-SiO2-Si heterostructure under influence of external electric field
Description
Influences of an external stationary electric field and corona discharge field are investigated on photocurrent Ι of short circuit in APV-layer of heterostructure Cd Te-SiO2-Si in a mode of 'field effect'. The residual photosensitivity of the APV- film is revealed caused by volume charges of arisen deep levels in insulator SiO2. Mechanisms of sign inversion of APV and its displacement on spectrum Ι depending on intensity of polarizing insulator of electric field are discussed. (author)
Additional details
Additional titles
- Original title (Russian)
- Фоточувствительност' AFN- пленок CdTe-SiO
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 6
- Journal Issue
- 1
- Journal Page Range
- p. 40-45
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 37073671
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM TELLURIDES; CHARGE CARRIERS; CORONA DISCHARGES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRICAL INSULATORS; FILMS; PHOTOCURRENTS; PHOTOSENSITIVITY; POLARIZATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SPECTRA
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CURRENTS; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; SENSITIVITY; SILICON COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- 6 refs., 4 figs