Published May 2003
| Version v1
Journal article
The use of cavities for gettering in silicon microelectronic devices
Description
This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal-oxide-semiconductor field effect transistors
Additional details
Identifiers
- PII
- S0168583X03007833;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 206
- Journal Issue
- 1-4
- Journal Page Range
- p. 422-426
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 13. international conference on ion beam modification of materials
- Dates
- 1-6 Sep 2002
- Place
- Kobe (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Egypt
- INIS RN
- 35049482
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRONIC EQUIPMENT; FIELD EFFECT TRANSISTORS; GETTERING; MICROELECTRONICS; OXIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; TRANSISTORS
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; EQUIPMENT; MATERIALS; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.