Published 1974
| Version v1
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Differences in defect production and annealing processes in boron- and carbon-irradiated germanium
Creators
- 1. Sussex Univ., Brighton (UK). School of Mathematical and Physical Sciences
Description
no abstract available
Availability note (English)
MF available from INIS under the Report Number.
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Pagination
- 13 p.
- Report number
- AED-Conf--74-328-014
Conference
- Title
- International conference on lattice defects in semiconductors.
- Dates
- 22 Jul 1974.
- Place
- Freiburg im Breisgau, F.R. Germany.
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 6171186
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BORON 11 BEAMS; CARBON 12 BEAMS; DOPED MATERIALS; ELECTRICAL PROPERTIES; GERMANIUM; HEAVY IONS; ION IMPLANTATION; KEV RANGE 10-100; POINT DEFECTS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; ION BEAMS; IONS; KEV RANGE; METALS; PHYSICAL PROPERTIES
Optional Information
- Notes
- 5 figs.; 17 refs. With abstract.