Published 1995 | Version v1
Miscellaneous Metadata-only

Digital analysis photo-induced current transients in semi-insulating GaAs and InP

Creators

  • 1. Institute of Electronic Materials Technology, Warsaw (Poland)
  • 2. Wojskowa Akademia Techniczna, Warsaw (Poland)

Description

Short communication

Part of:
Abstracts of 5. International Workshop Electronic Properties of Metal/Non-metal Microsystems

Additional details

Publishing Information

Publisher
Technical University of Wroclaw.
Imprint Place
Wroclaw (Poland)
Imprint Title
Abstracts of 5. International Workshop Electronic Properties of Metal/Non-metal Microsystems
Imprint Pagination
148 p.
Journal Page Range
p. 74.

Conference

Title
5. International Workshop on Electronic Properties of Metal/Non-metal Microsystems.
Dates
11-14 Sep 1995.
Place
Polanica Zdroj (Poland).

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
28067336
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
CHROMIUM IONS; CRYSTAL DEFECTS; CRYSTAL DOPING; ELECTRICAL PROPERTIES; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; IRON IONS; OPTICAL PROPERTIES; PHOTOELECTRIC EFFECT; PHOTOEMISSION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; IONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SECONDARY EMISSION

Optional Information