Specific features of ion-implanted layer structure of ferrite garnet epitaxial films

Results of investigation into the structure of ion-implanted layer (IL) of epitaxial ferrite-garnet films of Y1.25Eu0.3Ga0.55Ge0.85Fe4.15O12 composition are presented. The film was implanted by Ne2+ ions with 150 keV energy. Investigation was conducted by the methods of optical absorption and low-frequency magnetic susceptibility during low-temperature etching. The obtained results were correlated with results of theoretical calculation of profile of IL defect distribution in the framework of the model of independent scatterers. The conclusion about the pressure of radiation defects near IL surface, conditioned by scattering on oxygen and iron ions, was made