Published November 2005 | Version v1
Journal article Metadata-only

Relaxor properties and conductivity mechanism on γ irradiated TIInS2 crystals

Creators

  • 1. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku (Azerbaijan)

Description

Full Text: Density of condition of levels induced by radiation defects in TIInS2 crystal were determined. Localization radius of the defective center and length of a jump were determined. Influence of gamma irradiation could be received steady relaxor condition. It was supposed, that the carry of a charge in the field of existence relaxor condition was connected with tunneling from electronic levels in exclusion zone received by radiating influence, through potential barriers caused by a superlattice of TIInS2 crystal

Availability note (English)

Available in abstract form only, full text entered in this record

Additional details

Additional titles

Original title (Russian)
Релаксорные свойства и механизм проводимости γ-облученных кристаллов TlInS…

Publishing Information

Journal Title
Vestnik Natsionalnogo Issledovatelskogo Yadernogo Universiteta «MEPhI»
Journal Volume
55
Journal Issue
5
Journal Page Range
6 p.
ISSN
2304-7453

INIS

Country of Publication
Azerbaijan
Country of Input or Organization
Azerbaijan
INIS RN
44045491
Subject category
S38: RADIATION CHEMISTRY, RADIOCHEMISTRY AND NUCLEAR CHEMISTRY;
Resource subtype / Literary indicator
Translation
Descriptors DEI
CRYSTAL DEFECTS; DENSITY; GAMMA RADIATION; SUPERLATTICES; TUNNELING
Descriptors DEC
CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; PHYSICAL PROPERTIES; RADIATIONS

Optional Information

Notes
Translated from Russian