Published 2000
| Version v1
Miscellaneous
Optical properties and chemical structure of ion implanted a-SiC
- 1. Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia (Bulgaria)
- 2. Central Laboratory for Solar Energy and New Energy Sources, Sofia (Bulgaria)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000
- Imprint Pagination
- 120 p.
- Journal Page Range
- p. 111
Conference
- Title
- 3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000
- Dates
- 12-15 Jun 2000
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 32030062
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ARGON IONS; GERMANIUM IONS; HYDROGENATION; INFRARED SPECTRA; ION IMPLANTATION; MOESSBAUER EFFECT; MOLECULAR STRUCTURE; OPTICAL PROPERTIES; RAMAN SPECTRA; RUTHERFORD SCATTERING; SILICON CARBIDES; TIN 119; TIN IONS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; CHEMICAL REACTIONS; DAYS LIVING RADIOISOTOPES; ELASTIC SCATTERING; EVEN-ODD NUCLEI; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; NUCLEI; PHYSICAL PROPERTIES; RADIOISOTOPES; SCATTERING; SILICON COMPOUNDS; SPECTRA; STABLE ISOTOPES; TIN ISOTOPES
Optional Information
- Notes
- 3 refs