Published 2010
| Version v1
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Lateral straggling and its influence on lateral diffusion in implantation with a focused ion beam
Creators
- 1. Department of Materials Science, Indian Association for the Cultivation of Science Jadavpur, Kolkata 700032 (India)
- 2. Research Centre Dresden-Rossendorf, PF 51 01 19, 01314, Dresden (Germany)
Description
no abstract available
Files
42072857.pdf
Files
(41.2 kB)
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Additional details
Publishing Information
- Imprint Title
- 24. International Conference on Atomic Collisions in Solids ICACS-24
- Imprint Pagination
- 174 p.
- Journal Page Range
- p. Tu-1745B
- Report number
- INIS-PL--2011-0002
Conference
- Title
- 24. International Conference on Atomic Collisions in Solids
- Acronym
- ICACS-24
- Dates
- 18-23 Jul 2010
- Place
- Cracow (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 42072857
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- DIFFUSION; FOCUSING; GALLIUM IONS; ION IMPLANTATION; NANOSTRUCTURES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; IONS; MATERIALS; SEMICONDUCTOR MATERIALS; SEMIMETALS