Exchange bias in (La,Ca)MnO3 bilayers: influence of cooling process
Creators
- 1. Departamento de Física y Química, Universidad Nacional de Colombia-Sede Manizales, A.A. 127 Manizales (Colombia)
- 2. Grupo de Magnetismo y Simulación, Instituto de Física, Universidad de Antioquia, A.A. 1226 Medellín (Colombia)
Description
The exchange bias (EB) phenomenon in La2/3Ca1/3MnO3/La1/3Ca2/3MnO3 bilayers was studied using Monte Carlo simulations combined with the Heisenberg model and the Metropolis algorithm. These simulations were carried out using the model proposed by Kiwi for an uncompensated interface. The Hamiltonian considered several terms corresponding to the nearest neighbor interaction, magnetocrystalline anisotropy and Zeeman effect. Several interactions in the ferromagnetic (FM), antiferromagnetic (AFM) and FM/AFM interface were considered, depending on the type of interacting ion (Mn3+eg, Mn3+eg′ or Mn4+d3). The influence of field cooling and cooling temperature on the EB was analyzed and discussed. Regarding the field cooling, it caused an increase in the EB until a certain critical value was reached. After that, its effect was almost negligible. On the other hand, at low values of cooling temperature, not only the EB but also the coercive field were enhanced. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0965-0393/20/8/085009Additional details
Identifiers
Publishing Information
- Journal Title
- Modelling and Simulation in Materials Science and Engineering
- Journal Volume
- 20
- Journal Issue
- 8
- Journal Page Range
- [7 p.]
- ISSN
- 0965-0393
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45006032
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; ANTIFERROMAGNETISM; COMPUTERIZED SIMULATION; COOLING; HAMILTONIANS; HEISENBERG MODEL; INTERACTIONS; INTERFACES; LAYERS; MANGANESE IONS; MANGANESE OXIDES; MONTE CARLO METHOD; ZEEMAN EFFECT
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL MODELS; IONS; MAGNETISM; MANGANESE COMPOUNDS; MATHEMATICAL MODELS; MATHEMATICAL OPERATORS; OXIDES; OXYGEN COMPOUNDS; QUANTUM OPERATORS; SIMULATION; TRANSITION ELEMENT COMPOUNDS