Published November 1993
| Version v1
Journal article
Measurement of tunnel junction resistance during formation
- 1. San Francisco State Univ., CA (United States)
Description
The authors have measured the characteristics of aluminum tunnel junctions during and immediately after the formation of the junction. This has permitted us to observe changes in the oxide barrier, in vacuum and in air. By observing the barrier resistance during sputtering, they were able to diagnose and correct problems due to plasma discharges which were damaging the junctions. They report preliminary results from junctions passivated with a silicon nitride cap layer
Additional details
Publishing Information
- Journal Title
- Journal of Low Temperature Physics
- Journal Volume
- 93
- Journal Issue
- 3-4
- Journal Page Range
- p. 599-604.
- ISSN
- 0022-2291
- CODEN
- JLTPAC
Conference
- Title
- 5. international workshop on low temperature detectors.
- Dates
- 29 Jul - 3 Aug 1993.
- Place
- Berkeley, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25040613
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; ELECTRIC CONDUCTIVITY; FABRICATION; JUNCTION DETECTORS; SUPERCONDUCTING JUNCTIONS
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; MEASURING INSTRUMENTS; METALS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS
Optional Information
- Secondary number(s)
- CONF-930751--.