Published May 1, 2009
| Version v1
Journal article
First-principles calculation of the electronic band of ZnO doped with C
Creators
- 1. College of Physics and Engineering, Qufu Normal University, Qufu 273165 (China)
- 2. Library, Qufu Normal University, Qufu 273165 (China)
- 3. Shangxian Middle School, Tengzhou 277500 (China)
Description
Using the first-principles approach based upon the density functional theory (DFT), we have studied the electronic structure of wurtzite ZnO systems doped with C at different sites. When Zn is substituted by C, the system turns from a direct band gap semiconductor into an indirect band gap semiconductor, and donor levels are formed. When O is substituted by C, acceptor levels are formed near the top of the valence band, and thus a p-type transformation of the system is achieved. When the two kinds of substitution coexist, the acceptor levels are compensated for all cases, which is unfavorable for the p-type transformation of the system.
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/30/5/052001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 30
- Journal Issue
- 5
- Journal Page Range
- [4 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41079169
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARBON; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ELECTRONIC STRUCTURE; SEMICONDUCTOR MATERIALS; ZINC OXIDES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; ELEMENTS; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; VARIATIONAL METHODS; ZINC COMPOUNDS