Published May 1, 2009 | Version v1
Journal article

First-principles calculation of the electronic band of ZnO doped with C

  • 1. College of Physics and Engineering, Qufu Normal University, Qufu 273165 (China)
  • 2. Library, Qufu Normal University, Qufu 273165 (China)
  • 3. Shangxian Middle School, Tengzhou 277500 (China)

Description

Using the first-principles approach based upon the density functional theory (DFT), we have studied the electronic structure of wurtzite ZnO systems doped with C at different sites. When Zn is substituted by C, the system turns from a direct band gap semiconductor into an indirect band gap semiconductor, and donor levels are formed. When O is substituted by C, acceptor levels are formed near the top of the valence band, and thus a p-type transformation of the system is achieved. When the two kinds of substitution coexist, the acceptor levels are compensated for all cases, which is unfavorable for the p-type transformation of the system.

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/30/5/052001

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
30
Journal Issue
5
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41079169
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARBON; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ELECTRONIC STRUCTURE; SEMICONDUCTOR MATERIALS; ZINC OXIDES
Descriptors DEC
CALCULATION METHODS; CHALCOGENIDES; ELEMENTS; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; VARIATIONAL METHODS; ZINC COMPOUNDS