Published 2005 | Version v1
Journal article Metadata-only

Low-temperature MBE grown GaAs for pulsed THz radiation applications

Creators

  • 1. Semiconductor Physics Institute, Vilnius (Lithuania)

Description

Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in tetrahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals. (author)

Additional details

Additional titles

Augmented title (English)
thin films

Publishing Information

Journal Title
Acta Physica Polonica. Series A
Journal Volume
107
Journal Issue
1
Journal Page Range
p. 128-131
ISSN
0587-4246

Conference

Title
12. International Symposium on Ultrafast Phenomena in Semiconductors (12-UFPS). Part 1
Dates
22-25 Aug 2005
Place
Vilnius (Lithuania)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
37029543
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ARSENIC IONS; DETECTION; FAR INFRARED RADIATION; GALLIUM ARSENIDES; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; RECOMBINATION; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; CRYSTALS; ELECTROMAGNETIC RADIATION; EPITAXY; FILMS; GALLIUM COMPOUNDS; INFRARED RADIATION; IONS; PNICTIDES; RADIATIONS

Optional Information

Contract/Grant/Project number
NATO Projects SfP-977978 and SfP-974476
Notes
4 refs, 2 figs