Published March 1983
| Version v1
Journal article
Interaction between dangling bonds in vacancy-defects in silicon
Description
The 'defect-molecule' model in the simplest scheme (without configuration interaction) is reviewed and the concept of 'delocalized dangling-bonds' is explorated in the study of the interaction between the unsaturated hybrids of the mono and divacancy in silicon. The 'defect-molecule' hamiltonian is written in parametric form, and the parameters are extracted from full self-consistent calculations for both systems carried out through the MS-Xα molecular cluster model. (Author)
Abstract (Portuguese)
Faz-se uma breve revisao do esquema mais simplificado do modelo da 'molecula de defeito' (sem interacao de configuracao), e explora-se o conceito de orbital flutuante 'deslocalizado' no estudo da interacao dos hibridos nao saturados da mono e divacancia em silicio. O hamiltoniano da 'molecula de defeito' e escrito em forma parametrica, sendo os parametros entao extraidos de calculos autoconsistentes completos para os dois sistemas, realizados atraves do modelo de aglomerados moleculares no formalismo do Espalhamento Multiplo - Xα. (Autor)Additional details
Publishing Information
- Journal Title
- Rev. Bras. Fis.
- Journal Volume
- 13
- Journal Issue
- 1
- Series
- Rev. Bras. Fis.
- Journal Page Range
- 90-98
- ISSN
- 0374-4922
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 15054332
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- BOND LENGTHS; CRYSTAL STRUCTURE; CRYSTALS; MOLECULES; SILICON; THEORETICAL DATA; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; DATA; ELEMENTS; INFORMATION; NUMERICAL DATA; POINT DEFECTS; SEMIMETALS