Published 1994 | Version v1
Book Metadata-only

Heavy ion microscopy of single event upsets in CMOS SRAMs

Creators

  • 1. Siegen Univ. (Gesamthochschule) (Germany)
  • 2. Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany)
  • 3. European Space Research and Technology Centre, Noordwijk (Netherlands)

Description

The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine the sensitivity of integrated circuits (IC) to heavy ion irradiation. This method offers the possibility to directly image those parts of an IC which are sensitive to ion-induced malfunctions. By a 3-dimensional simulation of charge collection across p-n-micro-junctions we can predict SEU cross-sections. For a MHS65162 2k x 8bit CMOS SRAM we found two regions per bit with different sensitivity and measured a total cross-section of (71 ± 18)μm2 for a bitflip per cell and simulated 60μm2 with an argon beam of 1.4 MeV/nucl. (LET of 19.7 MeV/mg/cm2). (author). 11 refs., 5 figs

Part of:
Radiation and its effects on components and systems

Additional details

Publishing Information

Publisher
Commissariat a l'Energie Atomique.
Imprint Place
Bruyeres-le-Chatel (France)
Imprint Title
Radiation and its effects on components and systems
Imprint Pagination
596 p.
Journal Page Range
p. 499-502.

Conference

Title
2. European Conference on Radiation and its Effects on Components and Systems.
Dates
13-16 Sep 1993.
Place
Saint-Malo (France).

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
27008822
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ARGON 40 BEAMS; CHARGE COLLECTION; DEPLETION LAYER; ERRORS; HEAVY IONS; IMAGES; INCIDENCE ANGLE; INTEGRATED CIRCUITS; ION MICROPROBE ANALYSIS; LEAKAGE CURRENT; LET; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR STORAGE DEVICES; SILICON OXIDES; TRAPPED ELECTRONS; TWO-DIMENSIONAL CALCULATIONS; UNILAC
Descriptors DEC
ACCELERATORS; BEAMS; CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL ANALYSIS; CURRENTS; ELECTRIC CURRENTS; ELECTRONIC CIRCUITS; ELECTRONS; ELEMENTARY PARTICLES; ENERGY TRANSFER; FERMIONS; HEAVY ION ACCELERATORS; ION BEAMS; IONS; LEPTONS; LINEAR ACCELERATORS; MEMORY DEVICES; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS

Optional Information