Published December 2013 | Version v1
Journal article

Theoretical and experimental study of the excitonic binding energy in GaAs/AlGaAs single and coupled double quantum wells

  • 1. Departamento de Física, Química e Biologia, Universidade Estadual Paulista, C. P. 266, Presidente Prudente, São Paulo 17700-000 (Brazil)
  • 2. Departamento de Física, Universidade Federal de São Carlos, C. P. 676, São Carlos, São Paulo (Brazil)
  • 3. Departamento de Física, Universidade Estadual de Londrina, C. P. 6001, Londrina, Paraná (Brazil)
  • 4. Departamento de Física, Instituto de Ciências Exatas, Universidade Federal de Minas Gerais, C. P. 702, Belo Horizonte, Minas Gerais (Brazil)
  • 5. Laboratório de Novos Materiais Semicondutores, Instituto de Física, Universidade de São Paulo, C. P. 66318, São Paulo (Brazil)

Description

This paper discusses the theoretical and experimental results obtained for the excitonic binding energy (Eb) in a set of single and coupled double quantum wells (SQWs and CDQWs) of GaAs/AlGaAs with different Al concentrations (Al%) and inter-well barrier thicknesses. To obtain the theoretical Eb the method proposed by Mathieu, Lefebvre and Christol (MLC) was used, which is based on the idea of fractional-dimension space, together with the approach proposed by Zhao et al., which extends the MLC method for application in CDQWs. Through magnetophotoluminescence (MPL) measurements performed at 4 K with magnetic fields ranging from 0 T to 12 T, the diamagnetic shift curves were plotted and adjusted using two expressions: one appropriate to fit the curve in the range of low intensity fields and another for the range of high intensity fields, providing the experimental Eb values. The effects of increasing the Al% and the inter-well barrier thickness on Eb are discussed. The Eb reduction when going from the SQW to the CDQW with 5 Å inter-well barrier is clearly observed experimentally for 35% Al concentration and this trend can be noticed even for concentrations as low as 25% and 15%, although the Eb variations in these latter cases are within the error bars. As the Zhao's approach is unable to describe this effect, the wave functions and the probability densities for electrons and holes were calculated, allowing us to explain this effect as being due to a decrease in the spatial superposition of the wave functions caused by the thin inter-well barrier. -- Highlights: • Magnetophotoluminescence results from coupled double quantum wells are reported. • Theoretical and experimental values for excitonic binding energy (Eb) are obtained. • The effects of increasing the inter-well barrier height and thickness on Eb are discussed. • An Eb reduction is observed when going from zero to the 5 Å inter-well barrier CDQW. • The Eb reduction is explained by the spatial superposition of the wave functions

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2013.06.037

Additional details

Identifiers

DOI
10.1016/j.jlumin.2013.06.037;
PII
S0022-2313(13)00375-X;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
144
Journal Page Range
p. 98-104
ISSN
0022-2313
CODEN
JLUMA8

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45064744
Subject category
S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ALUMINIUM ARSENIDES; BINDING ENERGY; GALLIUM ARSENIDES; QUANTUM WELLS; THICKNESS; WAVE FUNCTIONS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DIMENSIONS; ENERGY; FUNCTIONS; GALLIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.