Published 1991 | Version v1
Book

Growth mechanism of epitaxial oxide films by laser MBE

  • 1. Central Research Lab., Sumitomo Cement Co. Ltd., Toyotomi-cho 585, Funabashi-shi, Chiba 274 (Japan)
  • 2. Research Lab. of Engineering Materials, Tokyo Inst. of Technology, Nagatsuta-cho 4259, Midori-ku, Yokohama-shi, Kanagawa 227 (Japan)

Description

This paper reports on crystallographic structure and valence state of CeO2 and Nd2--O3 films deposited by laser MBE on Si substrates investigated by reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). In contrast with epitaxial growth of CeO2(111) and Nd2O3(111) on Si(111), epitaxial films were not obtained on Si(001). Partially reduced mixed valence (4+ and 3+) Ce was indicated to exist by XPS in the cerium oxide film within 2 nm from the interface with Si. Beyond this transition layer, two-dimensional growth of CeO2 film on Si(111) was verified from in situ RHEED and as well as on Si--(001) from XPS measurements

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-094-1
Imprint Title
Evolution of thin-film and surface microstructure
Imprint Pagination
731 p.
Journal Page Range
p. 445-450.

Conference

Title
Fall meeting of the Materials Research Society (MRS).
Dates
24 Nov - 1 Dec 1990.
Place
Boston, MA (United States).

Optional Information

Secondary number(s)
CONF-901105--.