Published February 2014 | Version v1
Journal article

Development of CMOS Pixel Sensors with digital pixel dedicated to future particle physics experiments

  • 1. Institut Pluridisciplinaire Hubert Curien, University of Strasbourg, IN2P3/CNRS/UDS, 23 rue de Loess, BP20, F-67037 Strasbourg (France)

Description

Two prototypes of CMOS pixel sensor with in-pixel analog to digital conversion have been developed in a 0.18 μm CIS process. The first design integrates a discriminator into each pixel within an area of 22 × 33 μm2 in order to meet the requirements of the ALICE inner tracking system (ALICE-ITS) upgrade. The second design features 3-bit charge encoding inside a 35 × 35 μm2 pixel which is motivated by the specifications of the outer layers of the ILD vertex detector (ILD-VXD). This work aims to validate the concept of in-pixel digitization which offers higher readout speed, lower power consumption and less dead zone compared with the column-level charge encoding

Availability note (English)

Available from http://dx.doi.org/10.1088/1748-0221/9/02/C02004

Additional details

Publishing Information

Journal Title
Journal of Instrumentation
Journal Volume
9
Journal Issue
02
Journal Page Range
p. C02004
ISSN
1748-0221

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46055340
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
COMPARATIVE EVALUATIONS; DESIGN; LAYERS; READOUT SYSTEMS; SENSORS; SPECIFICATIONS; VELOCITY; ZONES
Descriptors DEC
EVALUATION