Published February 2014
| Version v1
Journal article
Development of CMOS Pixel Sensors with digital pixel dedicated to future particle physics experiments
Creators
- 1. Institut Pluridisciplinaire Hubert Curien, University of Strasbourg, IN2P3/CNRS/UDS, 23 rue de Loess, BP20, F-67037 Strasbourg (France)
Description
Two prototypes of CMOS pixel sensor with in-pixel analog to digital conversion have been developed in a 0.18 μm CIS process. The first design integrates a discriminator into each pixel within an area of 22 × 33 μm2 in order to meet the requirements of the ALICE inner tracking system (ALICE-ITS) upgrade. The second design features 3-bit charge encoding inside a 35 × 35 μm2 pixel which is motivated by the specifications of the outer layers of the ILD vertex detector (ILD-VXD). This work aims to validate the concept of in-pixel digitization which offers higher readout speed, lower power consumption and less dead zone compared with the column-level charge encoding
Availability note (English)
Available from http://dx.doi.org/10.1088/1748-0221/9/02/C02004Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Instrumentation
- Journal Volume
- 9
- Journal Issue
- 02
- Journal Page Range
- p. C02004
- ISSN
- 1748-0221
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46055340
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; DESIGN; LAYERS; READOUT SYSTEMS; SENSORS; SPECIFICATIONS; VELOCITY; ZONES
- Descriptors DEC
- EVALUATION