Published 2006 | Version v1
Book

Near edge x-ray absorption fine structure of Ni doped LaFeO3 thin film

  • 1. Materials Science and Engineering Divison, KIST, Cheongrang, Seoul (Korea, Republic of)
  • 2. UGC-DAE, CSR Khandwa Road, University Campus, Indore (India)
  • 3. Inter University Accelerator Centre, New Delhi (India)

Description

Electronic structure of LaFe0.7Ni0.3O3 thin film has been studied by near edge x-ray fine structure (NEXAFS) spectra at O K, Fe L3.2 and La M5.4 edges. On substitution of Ni at Fe site in LaFeO3, the O K-edge spectrum show a pre-edge feature starts rising about 2.0 eV lower than that of LaFeO3. This feature is consistent with our previous measurement of bulk samples of the same series. The study of Fe L3.2 edge structure confirm the trivalent state of Fe. The controlled doping of carriers in semiconducting regime and ferromagnetism, propose these types of materials as a promising candidate for spintronics applications. (author)

Part of:
Proceedings of the DAE solid state physics symposium. V. 51

Additional details

Publishing Information

Publisher
Prime Time Education
Imprint Place
Mumbai (India)
ISBN
81-8372-030-7
Imprint Title
Proceedings of the DAE solid state physics symposium. V. 51
Imprint Pagination
1058 p.
Journal Page Range
p. 471-472

Conference

Title
51. DAE solid state physics symposium
Dates
26-30 Dec 2006
Place
Bhopal (India)

Optional Information

Notes
3 refs., 1 fig.