Published April 2017 | Version v1
Journal article Metadata-only

Electro-photo modulation of the fermi level in WSe2/graphene van der Waals heterojunction

Creators

  • 1. College of Computer, National University of Defense Technology, Changsha 410073 (China)
  • 2. State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073 (China)
  • 3. College of Science, National University of Defense Technology, Changsha 410073 (China)
  • 4. College of Opto-Electronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

Description

Highlights: • We fabricate WSe2/graphene heterojunction field effect transistor. • Rectification behavior in output curve is observed under illumination. • The heterojunction has a considerable potential of photodetection. • A current peak is observed in transfer characteristic under illumination. • We report an electro-photo double modulation of the fermi level in WSe2/grapene. We report an electro-photo double modulation of the fermi level in a WSe2/graphene heterojunction. The heterojunction exhibits high ION/IOFF ratio (~103) in transfer characteristic in dark and distinct rectification behavior in output characteristic under light illumination, respectively. Time-dependent photoresponse reveals that the heterojunction has a considerable potential in the application of photodetection. Interestingly, an exotic current peak is observed in transfer characteristic under light illumination. This novel behavior is attributed to the tunable fermi level at the WSe2/graphene heterojunction by electro-photo double modulation. The results may be helpful to develop tunable photovoltaic optoelectronics based on van der Waals heterojunctions.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physe.2016.11.026

Additional details

Identifiers

DOI
10.1016/j.physe.2016.11.026;
PII
S1386947716310748;

Publishing Information

Journal Title
Physica E. Low-Dimensional Systems and Nanostructures (Print)
Journal Volume
88
Journal Page Range
p. 279-283
ISSN
1386-9477

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51076958
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
FERMI LEVEL; FIELD EFFECT TRANSISTORS; GRAPHENE; HETEROJUNCTIONS; ILLUMINANCE; MODULATION; PEAKS; PHOTOVOLTAIC EFFECT; SOLAR CELLS; TIME DEPENDENCE; VAN DER WAALS FORCES
Descriptors DEC
CARBON; DIRECT ENERGY CONVERTERS; ELEMENTS; ENERGY LEVELS; EQUIPMENT; NONMETALS; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLAR EQUIPMENT; TRANSISTORS

Optional Information

Copyright
Copyright (c) 2016 Elsevier B.V. All rights reserved.