Published May 21, 2011 | Version v1
Journal article

The silicon pixel system for the Micro Vertex Detector of the PANDA experiment

  • 1. INFN sezione di Torino, 10125 Torino (Italy)
  • 2. Dip. di Fisica Sperimentale - Universita di Torino, 10125 Torino (Italy)

Description

The design of the Micro Vertex Detector for the PANDA experiment faces a number of challenging aspects. The high radiation level, the limited space and accessibility, the strict material budget combined with the absence of a trigger signal and thus the huge amount of data to be sent to the DAQ require innovative solutions. Hybrid silicon pixels based on epitaxial material are under study as a detector technology capable to sustain the expected radiation levels at room temperature. A reduced scale prototype for the readout ASIC in a CMOS 0.13μm technology has been designed and tested. Irradiation tests have been performed on both the detector and the readout ASIC.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2009.09.043

Additional details

Identifiers

DOI
10.1016/j.nima.2009.09.043;
PII
S0168-9002(09)01785-9;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
617
Journal Issue
1-3
Journal Page Range
p. 560-562
ISSN
0168-9002
CODEN
NIMAER

Conference

Title
11. Pisa meeting on advanced detectors
Dates
24-30 May 2009
Place
La Biodola, Elba (Italy)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42009480
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DESIGN; EPITAXY; IRRADIATION; READOUT SYSTEMS; SIGNALS; SILICON
Descriptors DEC
CRYSTAL GROWTH METHODS; ELEMENTS; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.