Published February 15, 2013 | Version v1
Journal article

Electronic structure of SnSb2Te4 and PbSb2Te4 topological insulators

  • 1. Tomsk State University, pr. Lenina 36, 634050 Tomsk (Russian Federation)
  • 2. Institute of Strength Physics and Materials Science, pr. Academicheskiy 2/4, 634021 Tomsk (Russian Federation)
  • 3. Centro de Física de Materiales, CFM-MPC, Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastián/Donostia, Basque Country (Spain)
  • 4. Departamento de Física de Materiales, Facultad de Ciencias Químicas, UPV/EHU, Apdo. 1072, 20080 San Sebastián, Basque Country (Spain)
  • 5. Donostia International Physics Center (DIPC), Paseo de Manuel Lardizabal, 4, 20018 San Sebastián/Donostia, Basque Country (Spain)

Description

The bulk and surface electronic structure of SnSb2Te4 and PbSb2Te4 ternary compounds consisting of three septuple layer blocks separated by van der Waals gaps has been theoretically studied. It has been shown these systems are three dimensional topological insulators. The calculations of the MSb2Te4 (M = Pb, Sn) surface electronic structure show that these compound are well promising for practical application compared to parent Sb2Te3 compound.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2012.04.048

Additional details

Identifiers

DOI
10.1016/j.apsusc.2012.04.048;
PII
S0169-4332(12)00690-3;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
267
Journal Page Range
p. 1-3
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
11. international conference on atomically controlled surfaces, interfaces and nanostructures
Dates
3-7 Oct 2011
Place
St. Petersburg (Russian Federation)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46002791
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANTIMONY COMPOUNDS; COMPARATIVE EVALUATIONS; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; LEAD COMPOUNDS; SCATTERING; SURFACES; TELLURIUM COMPOUNDS; TERNARY ALLOY SYSTEMS; THREE-DIMENSIONAL CALCULATIONS; TIN COMPOUNDS; VAN DER WAALS FORCES
Descriptors DEC
ALLOY SYSTEMS; EVALUATION; MATERIALS

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.