Structural and compositional comparison of Si3N4 ceramics with different fracture modes
Creators
- 1. Department of Materials, University of Oxford, Oxford OX1 3PH (United Kingdom)
- 2. Institut fuer Keramik im Maschinenbau, Universitaet Karlsruhe, D-76131 Karlsruhe (Germany)
Description
Two similarly processed yttrium oxide-doped Si3N4 ceramics containing differing amounts of amorphous phase are studied. Differences in the fracture mode of these two materials have been analysed structurally and compositionally by transmission electron microscopy. In agreement with the chemistry of the starting materials, similar glass compositions are observed for the two samples from energy dispersive X-ray analysis. In both samples the yttrium-to-oxygen count ratio is lower in intergranular films than in pockets. The interfacial structure of prismatic crystal faces is similar in pockets and in intergranular films, with the main structural difference being a reduction in order as a function of distance from the prism plane, which is related to the film thickness. Atomic positions at the interface unequivocally related to yttrium attachment could not be identified. The results indicate that a low total amount of glass can play a role in dictating the film thickness. Furthermore, the possible influence of the width of intergranular films on the fracture mode is discussed
Additional details
Identifiers
- DOI
- 10.1016/j.actamat.2005.12.016;
- PII
- S1359-6454(06)00038-3;
Publishing Information
- Journal Title
- Acta Materialia
- Journal Volume
- 54
- Journal Issue
- 7
- Journal Page Range
- p. 1949-1956
- ISSN
- 1359-6454
- CODEN
- ACMAFD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38036897
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; CERAMICS; CRYSTALS; DOPED MATERIALS; FILMS; FRACTURES; GLASS; INTERFACES; SILICON NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY SPECTROSCOPY; YTTRIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; FAILURES; IONIZING RADIATIONS; MATERIALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; RADIATIONS; SILICON COMPOUNDS; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.