Published December 1, 2019
| Version v1
Journal article
Ti/4H-SiC Schottky diode with breakdown voltage up to 3 kV
- 1. Bryansk State Technical University, Brynask, 50 let Oktyabrya 7 (Russian Federation)
Description
In this study the breakdown voltage for Ti/4H-SiC type Schottky diode with six guard rings and JTE layer has been calculated by mean of numerical simulations. It is established that increase of the n-type 4H-SiC epitaxial layer from 14 up to 20 μm and addition of JTE layer lead to increase of breakdown voltage value on ∼900 V in contrast to the same diode without JTE. The above-mentioned diode's structure gives the possibility for designing and production of diode with higher breakdown voltage value up to 3 kV. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/1410/1/012196Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 1410
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 6. International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
- Acronym
- Saint Petersburg OPEN 2019
- Dates
- 22-25 Apr 2019
- Place
- Saint Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53068158
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BREAKDOWN; COMPUTERIZED SIMULATION; DESIGN; ELECTRIC POTENTIAL; EPITAXY; LAYERS; SCHOTTKY BARRIER DIODES; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTAL GROWTH METHODS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; SIMULATION