Published April 16, 2012
| Version v1
Journal article
Substrate effect on the electronic structures of CuPc/graphene interfaces
Creators
- 1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong (Hong Kong)
Description
The interfacial electronic structures of copper phthalocyanine (CuPc) deposited on a single-layer graphene (SLG) film prepared on Cu and SiO2 substrates (SLG/Cu and SLG/SiO2) were investigated using ultraviolet photoelectron spectroscopy. The ionization energy of CuPc on SLG/Cu and SLG/SiO2 substrate is, respectively, 5.62 eV and 4.97 eV. The energy level alignments at the two interfaces were estimated. The results revealed that the height of the electron (hole) injection barriers are 1.20 (1.10) and 1.38 (0.92) eV at CuPc/SLG/Cu and CuPc/SLG/SiO2 interfaces, respectively.
Additional details
Identifiers
- DOI
- 10.1063/1.3703766;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 100
- Journal Issue
- 16
- Journal Page Range
- p. 161603-161603.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43112813
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; COPPER; COPPER COMPOUNDS; CRYSTAL GROWTH; ELECTRONIC STRUCTURE; ENERGY LEVELS; EV RANGE; HOLES; INTERFACES; LAYERS; ORGANIC SEMICONDUCTORS; PHTHALOCYANINES; SILICON OXIDES; SUBSTRATES; SURFACE IONIZATION; THIN FILMS; ULTRAVIOLET RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; DYES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY RANGE; FILMS; HETEROCYCLIC COMPOUNDS; IONIZATION; MATERIALS; METALS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; RADIATIONS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SPECTROSCOPY; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2012 American Institute of Physics