Dependence of junction resistance of Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 solid solutions with Bi-Sn system alloy on the resistance of the nearcontact crystal layer

The influence of specific resistance of solid solution crystals Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 on resistance of transition contacts of thermal elements on their basis has been studied. It turned out that with a decrease in specific resistance of the above-mentioned crystals the resistance of their transition contact with the alloy Bi(57 mass%)+Sn(43 mass%) decreases. It is shown that by means of doping element addition to the contact material made of bismuth a high-alloy near-contact layer can be created and transition contact resistance thus can be controlled. Refs. 6, figs. 2