Mechanics-driven patterning of CVD graphene for roll-based manufacturing process
Creators
- 1. Graduate School of Energy Environment Water and Sustainability, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141 (Korea, Republic of)
- 2. Nano-Convergence Mechanical System Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103 (Korea, Republic of)
- 3. Center for Inorganic Analysis, Division of Metrology for Quality of Life, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113 (Korea, Republic of)
- 4. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141 (Korea, Republic of)
Description
Graphene is considered as a promising material for flexible and transparent electrodes due to its outstanding electrical, optical, and mechanical properties. Efforts to mass-produce graphene electrodes led to the development of roll-to-roll chemical vapor deposition (CVD) graphene growth and transfer, and the only remaining obstacle to the mass-production of CVD graphene electrodes is a cost-effective patterning technique that is compatible with the roll-to-roll manufacturing. Herein, we propose a mechanics-driven technique for patterning graphene synthesized on copper foil (commonly used in roll-to-roll manufacturing). The copper foil is exposed to high temperature for a prolonged period during the CVD growth of graphene, and thus can result in recrystallization and grain growth of the copper foil and thereby reducing to the yield strength. This softening behavior of the copper was carefully controlled to allow simple stamp patterning of the graphene. The strength of the underlying substrate was controlled for the accuracy of the residual patterns. The proposed stamp patterning technique is mask-less and photoresist-free, and can be performed at room temperature without high-energy sources such as lasers or plasma. To demonstrate the capability of this process to produce a continuous electrode, a transparent in-plane supercapacitor was fabricated using the proposed patterning technique. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1583/aa59afAdditional details
Identifiers
Publishing Information
- Journal Title
- 2D Materials
- Journal Volume
- 4
- Journal Issue
- 2
- Journal Page Range
- [8 p.]
- ISSN
- 2053-1583
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50045407
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRODES; FOILS; GRAIN GROWTH; GRAPHENE; RECRYSTALLIZATION; SUBSTRATES
- Descriptors DEC
- CARBON; CHEMICAL COATING; DEPOSITION; ELEMENTS; METALS; NONMETALS; SURFACE COATING; TRANSITION ELEMENTS