Published May 10, 2010
| Version v1
Journal article
Thin-film transistors based on p-type Cu2O thin films produced at room temperature
Creators
- 1. Departamento de Ciencia dos Materiais, CENIMAT/I3N, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica (Portugal)
- 2. Materiais Avancados, INNOVNANO, SA, 7600-095 Aljustrel (Portugal)
- 3. Electronic and Telecommunications Research Institute, 138 Gajeongro, Yuseong-gu, Daejeon, 305-700 (Korea, Republic of)
Description
Copper oxide (Cu2O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2/V s and an on/off ratio of 2x102.
Additional details
Identifiers
- DOI
- 10.1063/1.3428434;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 96
- Journal Issue
- 19
- Journal Page Range
- p. 192102-192102.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41078638
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER MOBILITY; COPPER OXIDES; CRYSTAL STRUCTURE; FIELD EFFECT TRANSISTORS; MAGNETRONS; POLYCRYSTALS; SEMICONDUCTOR MATERIALS; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; COPPER COMPOUNDS; CRYSTALS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MOBILITY; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2010 American Institute of Physics