Published November 14, 2006
| Version v1
Journal article
Bulk micromachining of silicon using electron-beam-induced carbonaceous nanomasking
Creators
- 1. Laboratoire MADIREL (UMR 6121), Electrochemistry of Materials Group, Universite de Provence-CNRS Centre Saint Jerome, F-13397 Marseille Cedex 20 (France)
- 2. Institut de Recherche Interdisciplinaire (IRI), Avenue Poincare BP 60069, 59652 Villeneuve d'Ascq (France)
- 3. Department of Materials Science, University of Erlangen-Nuremberg, WW4-LKO, Martensstrasse 7, D-91058 Erlangen (Germany)
Description
This paper reports on an alternative nanolithographic technique for bulk micromachining of silicon. We show how to selectively etch Si(110) in aqueous KOH solutions using electron-beam-induced nanomasking. Already nanometre thin carbonaceous films can completely suppress the wet anisotropic chemical etching of Si performed in alkaline solution (10 wt% KOH+5 wt% isopropanol). It is shown that under optimized conditions, this approach can be exploited for the fabrication of three-dimensional micro- and nanostructures
Availability note (English)
Available online at http://stacks.iop.org/0957-4484/17/5363/nano6_21_013.pdf or at the Web site for the journal Nanotechnology (Print) (ISSN 1361-6528 ) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0957-4484/17/5363/nano6_21_013.pdf; http://www.iop.org/;
- DOI
- 10.1088/0957-4484/17/21/013;
- PII
- S0957-4484(06)30235-8;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 17
- Journal Issue
- 21
- Journal Page Range
- p. 5363-5366
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38010735
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANISOTROPY; ELECTRON BEAMS; ETCHING; FABRICATION; MACHINING; NANOSTRUCTURES; POTASSIUM HYDROXIDES; SILICON; SOLUTIONS; THIN FILMS
- Descriptors DEC
- ALKALI METAL COMPOUNDS; BEAMS; DISPERSIONS; ELEMENTS; FILMS; HOMOGENEOUS MIXTURES; HYDROGEN COMPOUNDS; HYDROXIDES; LEPTON BEAMS; MIXTURES; OXYGEN COMPOUNDS; PARTICLE BEAMS; POTASSIUM COMPOUNDS; SEMIMETALS; SURFACE FINISHING