Quantification of series of X-ray spectra taken at different tilts in analytical transmission electron microscopy
Creators
- 1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)
Description
In 2007, it was suggested that by varying the take-off angle between repeated measurements of the same region in energy-dispersive X-ray spectroscopy (EDXS) in a transmission electron microscope (TEM) a significant improvement of the accuracy of X-ray quantification could be achieved. Simultaneously, an analytical expression of the depth within the thin foil specimen of the feature analysed was derived, which in turn could be used to better quantify the material of interest. Simulated results for the absorption of a variety of X-rays in different semiconductor substrates using different Monte Carlo programs will be presented, specifically regarding a model which corrects for tilting the specimen toward or away from the detector: a common method of varying the take-off angle. A set of experimental EDX spectra of capped InAs quantum wells or dots taken in plan-view geometry by tilting the specimen holder will be used for comparison of experimental with the simulated data.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/326/1/012037Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 326
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 17. international conference on microscopy of semiconducting materials 2011
- Dates
- 4-7 Apr 2011
- Place
- Cambridge (United Kingdom)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43092512
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; ACCURACY; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; FOILS; INDIUM ARSENIDES; MONTE CARLO METHOD; QUANTUM WELLS; SAMPLE HOLDERS; SEMICONDUCTOR MATERIALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTRA; X-RAY SPECTROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; ELECTRON MICROSCOPY; EVALUATION; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PNICTIDES; SIMULATION; SORPTION; SPECTRA; SPECTROSCOPY