Published November 1996
| Version v1
Journal article
Effect of technological annealing temperature on radiation-induced changes in the electrical properties of MOS(Si) structures
- 1. A.N. Sevchenko Scientific-Research Institute for Applied-Physics Problems, Belorus State University, 22064 Minsk (Belarus)
Description
The effect of thermal annealing of MOS transistors on radiation degradation of the electrical properties of the devices was investigated. It was shown that, for MOS devices using pyrogenic gate oxides, subsequent heat treatment above 850 deg. C leads to a significant increase in radiation degradation efficiency. The results were interpreted in terms of a model involving the relaxation of internal mechanical stresses
Additional details
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 30
- Journal Issue
- 11
- Journal Page Range
- p. 1024-1026
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35046594
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- ANNEALING; EXPERIMENTAL DATA; GAMMA RADIATION; METALS; OXIDES; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SILICON; STRESS RELAXATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K
- Descriptors DEC
- CHALCOGENIDES; DATA; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; INFORMATION; IONIZING RADIATIONS; NUMERICAL DATA; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; RELAXATION; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 30, 1969-1974 (November, 1996); (c) 1996 American Institute of Physics.