Serial sectioning of grain microstructures under junction control: An old problem in a new guise
Creators
- 1. Institute for Experimental Physics, Otto von Guericke University, Magdeburg (Germany)
Description
In the present work the importance of 3D and 4D microstructure analyses are shown. To that aim, we study polycrystalline grain microstructures obtained by grain growth under grain boundary, triple line and quadruple point control. The microstructures themselves are obtained by mesoscopic computer simulations, which enjoy a far greater control over the kinetic and thermodynamic parameters affecting grain growth than can be realized experimentally. In extensive simulation studies we find by 3D respectively 4D microstructure analyses that metrical and topological properties of the microstructures depend strongly on the microstructural feature controlling the growth kinetics. However, the differences between the growth kinetics vanish when we look at classical 2D sections of the 3D ensembles making a differentiation of the controlling grain feature near impossible. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1757-899X/82/1/012080Additional details
Identifiers
Publishing Information
- Journal Title
- IOP Conference Series. Materials Science and Engineering (Online)
- Journal Volume
- 82
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1757-899X
Conference
- Title
- 17. international conference on textures of materials
- Acronym
- ICOTOM 17
- Dates
- 24-29 Aug 2014
- Place
- Dresden (Germany)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47099349
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTERIZED SIMULATION; CONTROL; ELECTRIC CONTACTS; GRAIN BOUNDARIES; GRAIN GROWTH; MICROSTRUCTURE; POLYCRYSTALS; TOPOLOGY
- Descriptors DEC
- CRYSTALS; ELECTRICAL EQUIPMENT; EQUIPMENT; MATHEMATICS; MICROSTRUCTURE; SIMULATION