Published June 16, 1985
| Version v1
Journal article
Shallow energy states in CdTe
Description
The energetic positions E/sub t/ of the shallow states for variously prepared CdTe (110) surface are determined, basing on results of surface photovoltage spectroscopy (SPS) measurements in the temperature range between 80 and 300 K. The measurements are performed with the Kelvin method using a modified measuring system. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 89
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 623-628
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 17008921
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM TELLURIDES; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; ENERGY GAP; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; LOW TEMPERATURE; MONOCRYSTALS; P-TYPE CONDUCTORS; PHOTOVOLTAIC EFFECT; SAMPLE PREPARATION; SURFACES; TEMPERATURE DEPENDENCE; VISIBLE RADIATION
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTROMAGNETIC RADIATION; MATERIALS; PHOTOELECTRIC EFFECT; RADIATIONS; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS