Published July 1984 | Version v1
Journal article Metadata-only

Influence of ion irradiation on the concentration of paramagnetic centers in a-Si films deposited in vacuum

Creators

  • 1. Antanas Snechkus Polytechnic Institute, Kaunas

Description

A study was made of the influence of ion irradiation on the concentration of paramagnetic centers in a-Si films formed by vacuum deposition. It was found that controlled ion irradiation during deposition increased the concentration of paramagnetic centers with the g factor of 2.006 when the ratio of the fluxes of the ions and deposited material was in the range F/sub i//F/sub k/ = 0--0.02, whereas in the range F/sub i//F/sub k/>0.025 the concentration of paramagnetic centers reached saturation and was 2--2.5 times higher than for a film deposited without additional irradiation

Additional details

Publishing Information

Journal Title
Sov. Phys. - Semicond. (Engl. Transl.)
Journal Volume
18
Journal Issue
7
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
745-746
ISSN
0038-5700

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
16049739
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AMORPHOUS STATE; EXPANSION; IONS; PARAMAGNETISM; PHYSICAL RADIATION EFFECTS; QUANTITY RATIO; SILICON; THIN FILMS
Descriptors DEC
CHARGED PARTICLES; ELEMENTS; FILMS; MAGNETISM; RADIATION EFFECTS; SEMIMETALS

Optional Information

Notes
Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).