Frequency dependence of ESR-line width in amorphous silicon in the 9-130 GHz range

The ESR line width (ΔHpp) of D-centers in silicon made amorphous by means of ion implantation has been studied for the first time in a wide range of recording frequencies ν=9-130 GHz to clarify the contribution of different broadening mechanisms in ΔHpp and to get more details on the peculiarity of defect formation in silicon as a result of ion implantation. Samples of high-resistance silicon, irradiated by 100 keV As+ ion at a dose of 1.8x1015cm-2 have been considered. Concentration of D-centers with g-factor (g=2.0055) in them constituted ∼1020cm-3. Measurements of ΔHpp are made by three ESR spectrometers at four observation frequencies: 9.4,35,72 and 130GHz. It was ascertained that ΔHpp does not depend on T in the range of 4.2-300K. Analysis of ESR line shape has shown that at ν=9.4 and 35GHz it is a lorentzian, at ν=72 GHz-intermediate between lorentzian and gaussian, at ν=130 GHz - close to gaussian one. Experimental data of ΔHpp(ν) dependence are presented