Published 1976
| Version v1
Book
Annealing of vacancy clusters in silicon
- 1. AN SSSR, Novosibirsk
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- Bristol
- ISBN
- 0 85498 121 7
- Imprint Title
- Radiation effects in semiconductors, 1976. Invited and contributed papers from the international conference on radiation effects in semiconductors held in Dubrovnik, 6-9 September 1976
- Journal Issue
- no. 31
- Series
- Institute of Physics Conference Series.
- Journal Page Range
- p. 505.
- ISSN
- 0305-2346
Conference
- Title
- International conference on radiation effects in semiconductors.
- Dates
- 6 - 9 Sep 1976.
- Place
- Dubrovnik, Yugoslavia.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 9370133
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; ELECTRON SPIN RESONANCE; IONS; NUCLEATION; PHYSICAL RADIATION EFFECTS; SILICON; VACANCIES
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; MAGNETIC RESONANCE; POINT DEFECTS; RADIATION EFFECTS; RESONANCE; SEMIMETALS
Optional Information
- Notes
- Brief communication.