Fabrication and characterization of microdisk resonators with In(Ga)As/GaAs quantum dots
Creators
- 1. Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart (Germany)
Description
We report on the fabrication and characterization of GaAs-based microdisk resonators containing lowsurface-density self-assembled In(Ga)As quantum dots. Microdisks of different sizes are obtained by optical and electron-beam lithography followed by a two-step wet chemical etching. The use of wet etching results in smooth disk edges. The optical properties of the quantum dots and microdisks are studied by microphotoluminescence spectroscopy as a function of excitation power. Disks with quality factors larger than 12000 (resolution limited spectral width) are easily obtained with the described approach even with optical lithography. Laser heating of microdisks is also discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.200671502Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Conferences
- Journal Volume
- 3
- Journal Issue
- 11
- Journal Page Range
- p. 3641-3645
- ISSN
- 1610-1634
Conference
- Title
- 4. International conference on semiconductor quantum dots (QD2006)
- Dates
- 1-5 May 2006
- Place
- Chamonix-Mont Blanc (France)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 38009916
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- EMISSION SPECTRA; ETCHING; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INFRARED SPECTRA; PHOTOLUMINESCENCE; QUANTUM DOTS; RESONATORS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRONIC EQUIPMENT; EMISSION; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; SPECTRA; SURFACE FINISHING
Optional Information
- Notes
- With 4 figs., 20 refs.. SICI: 1610-1634(200612)3:11<3641::AID-PSSC200671502>3.0.TX;2-Z