Published December 2009
| Version v1
Journal article
Effects of the shape of spin gate elements on their magnetic and magnetoresistive characteristics
Creators
- 1. Moscow State Institute of Electronic Engineering (Technical University) (Russian Federation)
- 2. Federal State Unitary Enterprise 'Lukin Scientific Research Institute of Physical Problems' (Russian Federation)
- 3. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
Description
The effect of the geometric shape of elements of a spin-dependent tunneling gate on their magnetic characteristic is studied theoretically and experimentally. The hysteresis dependences of the magnetization and magnetoresistance of rectangular, hexagonal, and ringed elements on the magnetic field are calculated for different characteristically geometric parameters of the elements. In the studies of the magneto-optical Kerr effect, magnetic hysteresis loops are observed. The calculated and experimental magnetization curves are compared, and qualitative agreement between the curves is gained.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 43
- Journal Issue
- 13
- Journal Page Range
- p. 1695-1699
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43040196
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DIAGRAMS; HYSTERESIS; KERR EFFECT; MAGNETIC FIELDS; MAGNETIZATION; MAGNETORESISTANCE; SHAPE; SPIN; TUNNEL EFFECT
- Descriptors DEC
- ANGULAR MOMENTUM; DIELECTRIC PROPERTIES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; INFORMATION; PARTICLE PROPERTIES; PHYSICAL PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2009 Pleiades Publishing, Ltd.