Published December 2009 | Version v1
Journal article

Effects of the shape of spin gate elements on their magnetic and magnetoresistive characteristics

  • 1. Moscow State Institute of Electronic Engineering (Technical University) (Russian Federation)
  • 2. Federal State Unitary Enterprise 'Lukin Scientific Research Institute of Physical Problems' (Russian Federation)
  • 3. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

Description

The effect of the geometric shape of elements of a spin-dependent tunneling gate on their magnetic characteristic is studied theoretically and experimentally. The hysteresis dependences of the magnetization and magnetoresistance of rectangular, hexagonal, and ringed elements on the magnetic field are calculated for different characteristically geometric parameters of the elements. In the studies of the magneto-optical Kerr effect, magnetic hysteresis loops are observed. The calculated and experimental magnetization curves are compared, and qualitative agreement between the curves is gained.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
43
Journal Issue
13
Journal Page Range
p. 1695-1699
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43040196
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DIAGRAMS; HYSTERESIS; KERR EFFECT; MAGNETIC FIELDS; MAGNETIZATION; MAGNETORESISTANCE; SHAPE; SPIN; TUNNEL EFFECT
Descriptors DEC
ANGULAR MOMENTUM; DIELECTRIC PROPERTIES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; INFORMATION; PARTICLE PROPERTIES; PHYSICAL PROPERTIES

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Copyright
Copyright (c) 2009 Pleiades Publishing, Ltd.