Published March 31, 2016 | Version v1
Journal article

Transformation of porous structure under vacuum ultraviolet irradiation of the films based on silicon dioxide

  • 1. Novosibirsk State University, 630090, Novosibirsk (Russian Federation)
  • 2. Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Lavrentiev ave., 13 (Russian Federation)

Description

Transformation of the films with the pores of different radii under the action of vacuum ultraviolet radiation was studied experimentally and theoretically. Simulation results showed that Si–O–Si angle depends on pore size. Fourier Transform infrared spectra provide indirect confirmation of this statement. The experimental data and calculation results suggest that methyl group decreases π bonding, which causes a decrease in Si–O–Si angle. The action of ultraviolet radiation is to be considered as a photochemical reaction; the fragments formed in this reaction (CH3, CH2) can participate in polymerization, which leads to pore sealing. - Highlights: • Irradiation with the energy of 10–20 eV causes pore sealing. • FTIR studies and simulation results show that Si–O–Si angle depends on pore size. • Fragments formed in photochemical reaction (CH2) can participate in polymerization. • Polymerization probability is high because the process takes place in closed space.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2016.02.027

Additional details

Identifiers

DOI
10.1016/j.tsf.2016.02.027;
PII
S0040-6090(16)00117-6;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
603
Journal Page Range
p. 249-254
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.