Absorption spectra of silicon irradiated with reactor neutrons at cryogenic temperatures

The influence of low temperatures during irradiation with reactor neutrons on the near-edge absorption in silicon grown by the zone melting method and on the kinetics of annealing of radiation defects had been investigated on the basis of changes in the electrical resistivity. The authors investigated the absorption spectra of Si crystals containing oxygen in a concentration of 1016 cm-3 as well as crystals grown by the Czochralski method with an oxygen concentration of 1·1018 cm-3. These crystals were irradiated in a low-temperature reactor channel at 100 K