Published June 7, 2007
| Version v1
Journal article
Electrochemically constructed p-Cu2O/n-ZnO heterojunction diode for photovoltaic device
Creators
- 1. Department of Electronics Materials, Osaka Municipal Technical Research Institute, 1-6-50 Morinopmiya, Joto-ku, Osaka 536-8553 (Japan)
- 2. Graduate School of Engineering, Doshisha University, 1-3 Tatara-Miyakodani, Kyotanabe-shi, Kyoto 610-0321 (Japan)
Description
Polycrystalline n-ZnO/p-Cu2O heterojunctions have been fabricated by low-temperature eletrodepositions of ZnO and Cu2O layers in aqueous solutions. The condition for forming the Cu2O layer significantly reflected the electrical rectification characteristic and the photovoltaic performance, and the heterojunction fabricated under optimized conditions showed an excellent electrical rectification characteristic and a photovoltaic performance of 1.28% in conversion efficiency under an AM 1.5 illumination
Additional details
Identifiers
- DOI
- 10.1088/0022-3727/40/11/010;
- PII
- S0022-3727(07)44505-3;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 40
- Journal Issue
- 11
- Journal Page Range
- p. 3326-3329
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38083458
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AQUEOUS SOLUTIONS; COPPER OXIDES; ELECTROCHEMISTRY; HETEROJUNCTIONS; PHOTOVOLTAIC EFFECT; POLYCRYSTALS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMISTRY; COPPER COMPOUNDS; CRYSTALS; DISPERSIONS; HOMOGENEOUS MIXTURES; MIXTURES; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC EFFECT; SEMICONDUCTOR JUNCTIONS; SOLUTIONS; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS